Fixapart TIP35C-MBR Datasheet download pdf

TIP35C

TIP36B/36C

COMPLEMENTARY SILICON HIGH POWER

TRANSISTORS

■ SGS-THOMSON PREFERRED SALESTYPE

DESCRIPTION

The TIP35C is a silicon epitaxial-base NPN

transistors in TO-218 plastic package. It is

intented for use in power amplifier and switching

applications.

TIP36B is a silicon PNP transistor.

The complementary PNP type for TIP35C is

TIP36C.

INTERNAL SCHEMATIC DIAGRAM

April 1997

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

NPN TIP35C

PNP TIP36B TIP36C

CBO

Collector-Base Voltage (I

= 0) 80 100 V

CEO

Collector-Emitter Voltage (I

= 0) 80 100 V

EBO

Emitter-Base Voltage (I

= 0) 5 V

Collector Current 25 A

Collector Peak Current 50 A

Base Current 5 A

tot

Total Dissipation at T

case

≤ 25

C 125 W

stg

Storage Temperature -65 to 150

Max. Operating Junction Temperature 150

For PNP types voltage and current values are negative.

TO-218

1/4

1 2 3 4

TIP36B/36C 1
TIP35C/TIP36B/TIP36C 2

Summary of Contents

Page 1 - TIP36B/36C

TIP35CTIP36B/36CCOMPLEMENTARY SILICON HIGH POWERTRANSISTORS SGS-THOMSON PREFERRED SALESTYPEDESCRIPTION

Page 2 - TIP35C/TIP36B/TIP36C

THERMAL DATARthj-caseThermal Resistance Junction-case Max 1oC/WELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless ot

Page 3

DIM.mm inchMIN. TYP. MAX. MIN. TYP. MAX.A 4.7 4.9 0.185 0.193C 1.17 1.37 0.046 0.054D2.5 0.098E 0.5 0.78 0.019 0.030F 1.1 1.3 0.043 0.051G 10.8 11.1 0

Page 4

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for theconsequences of

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